The EPC8010 power transistor, sold in die form, measures 1.75 mm 2 with 100 VDS. Optimized for high speed switching, the device has a maximum R DS(on) of 160 mΩ and input gate charge in the hundreds ...
(Application Note) Here is a new Application Note from Nanosurf on conductive AFM (C-AFM) measurements on a polished IC surface with multiple transistor contacts. Chemical-mechanical polishing (CMP) ...
Traditional CMOS chips are fabricated by applying and then etching repeated layers of different materials, applied to a wafer of ultra-pure silicon. The bottom-most layer, also known as the front end ...
Morning Overview on MSN
MIT finds a new way to pack more transistors on a chip
For decades, chipmakers have squeezed more computing power out of silicon by shrinking transistors, but that strategy is ...
Many DSP chips, microprocessors, FPGAs, and ASICs require multiple power supplies that must deliver different voltages in a specific start-up sequence. Out-of-sequence voltages can cause excessive ...
The discovery of CRISPR technology has revolutionized the fields of transcriptional activation and repression, genome editing, gene-based therapeutics and diagnostics. The applications of this ...
Silicon transistors and the brain don’t mix. At least not optimally. As scientists and companies are increasingly exploring ways to interface your brain with computers, fashioning new hardware that ...
The promise of 5G Internet of Things (IoT) networks requires more scalable and robust communication systems -- ones that deliver drastically higher data rates and lower power consumption per device.
Efficient Power Conversion Corporation extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS.
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