Santa Clara, CA and Kyoto, Japan, Aug. 29, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of power modules equipped with 4 th generation SiC MOSFET bare chips for the ...
A new generation of 1200 V silicon carbide power modules raises the bar on current density and thermal performance, targeting ...
Fuji Electric has announced an agreement with Robert Bosch GmbH to collaborate on SiC power semiconductor modules for ...
Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...
Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
Rohm Semiconductor has announced the use of power modules equipped with the company's fourth-generation SiC MOSFET bare chips for traction inverters in three ZEEKR EV models manufactured by Zhejiang ...
Japan's Ministry of Economy, Trade, and Industry (METI) has announced a subsidy program totaling up to JPY70.5 billion (US$470.34 million) for the SiC power semiconductor production collaboration ...
In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: ...
Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...
The stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by 1-fold, SiC power modules allow for ...
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